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AO3160

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AO3160

MOSFET N-CH 600V 40MA SOT23-3

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO3160 is an N-Channel MOSFET designed for high voltage applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 40mA at 25°C ambient temperature, with a maximum power dissipation of 1.39W (Ta). The AO3160 is provided in a SOT-23A-3 surface-mount package, also known as TO-236-3 or SC-59. Key electrical characteristics include a maximum Rds On of 500 Ohms at 16mA and 10V, a gate charge (Qg) of 1.5 nC at 10V, and input capacitance (Ciss) of 15 pF at 25V. The device operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply circuits, lighting applications, and general-purpose switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40mA (Ta)
Rds On (Max) @ Id, Vgs500Ohm @ 16mA, 10V
FET Feature-
Power Dissipation (Max)1.39W (Ta)
Vgs(th) (Max) @ Id3.2V @ 8µA
Supplier Device PackageSOT-23A-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds15 pF @ 25 V

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