AOP610
MOSFET N/P-CH 30V 8DIPManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AOP610 is a MOSFET array featuring both N-channel and P-channel configurations. This through-hole component offers a drain-source voltage (Vdss) of 30V and a maximum power dissipation of 2.3W. The AOP610 is designed with a logic level gate and exhibits a low on-resistance of 24mOhm at 7.7A and 10V. Key electrical parameters include a gate charge (Qg) of 15nC @ 10V and input capacitance (Ciss) of 630pF @ 15V. The device operates within a temperature range of -55°C to 150°C. Packaged in an 8-PDIP (0.300", 7.62mm) format, this MOSFET array is suitable for applications in power management and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.3W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 15V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-PDIP |
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