AOP609
MOSFET N/P-CH 60V 8DIPManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. presents the AOP609, a dual N-channel and P-channel MOSFET array in an 8-PDIP through-hole package. This component features a drain-source voltage (Vdss) of 60V and a maximum continuous drain current of 4.7A at 10V gate-source voltage, with a typical Rds(On) of 60mOhm. The device is designed with a logic level gate and a gate charge of 7nC maximum at 10V. Input capacitance (Ciss) is 570pF maximum at 30V. With a maximum power dissipation of 2.5W and an operating temperature range of -55°C to 150°C, the AOP609 is suitable for applications in power management and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 30V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-PDIP |
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