AOP605
MOSFET N/P-CH 30V 8DIPManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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The Alpha & Omega Semiconductor Inc. MOSFET array, part number AOP605, features N and P-channel configurations with a maximum drain-source voltage of 30V. This through-hole component is housed in an 8-PDIP package and is rated for 2.5W maximum power dissipation. Key parameters include a gate charge (Qg) of 16.6nC at 4.5V and input capacitance (Ciss) of 820pF at 15V. The on-resistance (Rds On) is a maximum of 28mOhm at 7.5A and 10V, and it operates with a logic-level gate. The device is suitable for applications operating within a temperature range of -55°C to 150°C. This component is utilized across various power management and switching applications in industries such as automotive, industrial, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 15V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-PDIP |
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