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AONL32328

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AONL32328

MOSFET 2N/2P-CH 30V 8A/7A 12DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AONL32328, a 30V MOSFET array featuring a 2N/2P-channel configuration in a compact 12-DFN-EP (4x3) surface-mount package. This device offers continuous drain currents of 8A for the N-channel and 7A for the P-channel, both rated at 25°C ambient. Key electrical characteristics include a maximum Rds On of 21mOhm at 8A for the N-channel and 27mOhm at 7A for the P-channel, with a gate drive of 10V. The input capacitance (Ciss) is specified at 395pF for the N-channel and 730pF for the P-channel, both at 15V Vds. This component is suitable for applications requiring efficient power switching and is commonly utilized in consumer electronics and power management systems. The operating temperature range is -55°C to 150°C (TJ), and it is supplied on a tape and reel for automated assembly.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case12-PowerWDFN
Mounting TypeSurface Mount
Configuration2 N and 2 P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.6W (Ta)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V, 24nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id2.4V @ 250µA, 2.6V @ 250µA
Supplier Device Package12-DFN-EP (4x3)

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