AON7900
MOSFET 2N-CH 30V 8A/13A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AON7900 is a dual N-channel MOSFET array designed for advanced power management applications. This component features a 30V drain-source voltage rating and offers continuous drain currents of 8A and 13A at 25°C. The low on-resistance of 21mOhm at 8A and 10V, coupled with a logic level gate, ensures efficient operation. Key parameters include a gate charge of 11nC (max) at 10V and an input capacitance of 710pF (max) at 15V. The device is housed in an 8-DFN-EP (3.3x3.3) package, suitable for surface mounting, and operates within a temperature range of -55°C to 150°C. The AON7900 finds application in various sectors, including consumer electronics, computing, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.8W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A, 13A |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 15V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-DFN-EP (3.3x3.3) |
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