AON7820
MOSFET 2N-CH 20V 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AON7820 is a dual N-channel MOSFET array designed for efficient power management. This device features a 20V drain-to-source voltage (Vdss) and a 3.1W maximum power dissipation. The MOSFETs are configured with common drain and utilize Metal Oxide technology, offering logic-level gate drive for enhanced performance with lower gate voltage requirements. Key parameters include a 1V gate threshold voltage (Vgs(th)) at 250µA and a maximum gate charge (Qg) of 22nC at 4.5V. Input capacitance (Ciss) is rated at a maximum of 2065pF at 10V. The AON7820 is housed in an 8-DFN-EP (3x3) package, suitable for surface mounting and supplied on tape and reel. This component is commonly employed in automotive and industrial power applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2065pF @ 10V |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-DFN-EP (3x3) |
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