AON6998
MOSFET 2N-CH 30V 19A/26A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. presents the AON6998, a dual N-channel MOSFET array designed for demanding applications. This device features a 30V drain-to-source voltage (Vdss) with continuous drain currents of 19A and 26A at 25°C. The low on-resistance of 5.2mOhm at 20A and 10V (Rds On) minimizes conduction losses. Key parameters include a gate charge of 13nC (Qg) at 10V and input capacitance of 820pF (Ciss) at 15V. The AON6998 is housed in an 8-DFN (5x6) package, suitable for surface mounting and supplied on tape and reel. This component is utilized in power management solutions across various industries. The maximum power dissipation is 3.1W, and it operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 19A, 26A |
| Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 15V |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
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