AON6996
MOSFET 2N-CH 30V 50A/60A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. MOSFET Array, AON6996, offers a dual 2 N-channel configuration with a 30V drain-to-source voltage. This device features a low Rds(On) of 5.2mOhm at 20A and 10V, coupled with a maximum continuous drain current of 50A for one channel and 60A for the other at 25°C. The AON6996 is housed in an 8-DFN (5x6) package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 13nC (max) at 10V and input capacitance (Ciss) of 820pF (max) at 15V. With a maximum power dissipation of 3.1W and an operating temperature range of -55°C to 150°C, this MOSFET array is designed for applications in power management, consumer electronics, and computing.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 50A, 60A |
| Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 15V |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
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