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AON6934

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AON6934

MOSFET 2N-CH 30V 22A/30A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AON6934, an electronic component featuring a 2-N-channel, asymmetrical MOSFET array. This device is designed for demanding applications with a Drain to Source Voltage (Vdss) of 30V and continuous drain currents (Id) of 22A and 30A at 25°C, respectively. With a low Rds On of 5.2mOhm at 20A and 10V, and a maximum power dissipation of 3.6W and 4.3W, it ensures efficient operation. The AON6934 utilizes MOSFET technology and a logic level gate for enhanced control. Key electrical parameters include Gate Charge (Qg) of 22nC @ 10V and Input Capacitance (Ciss) of 1037pF @ 15V. Packaged in an 8-DFN (5x6) surface mount configuration, this component is suitable for high-density board designs and operates across a wide temperature range of -55°C to 150°C. The AON6934 finds application in power management solutions within the automotive and industrial sectors. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Asymmetrical
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max3.6W, 4.3W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C22A, 30A
Input Capacitance (Ciss) (Max) @ Vds1037pF @ 15V
Rds On (Max) @ Id, Vgs5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (5x6)

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