AON6928
MOSFET 2N-CH 30V 17A/30A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AON6928 is a dual, asymmetrical N-channel MOSFET array designed for high-efficiency power management applications. This 30V device features a low Rds(on) of 8.2mOhm at 20A and 10V, enabling reduced conduction losses. The AON6928 offers continuous drain currents of 17A and 30A per channel, with maximum power dissipation ratings of 3.6W and 4.3W respectively. It operates with a logic-level gate, requiring a Vgs(th) of 2.5V at 250µA, and exhibits a gate charge of 24nC at 10V. Input capacitance (Ciss) is rated at 1150pF at 15V. The component is housed in an 8-DFN (5x6) package, suitable for surface mounting and supplied on tape and reel. This MOSFET array is commonly employed in automotive, consumer electronics, and industrial power conversion systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.6W, 4.3W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 17A, 30A |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 15V |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
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