AON6926
MOSFET 2N-CH 30V 11A/12A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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The Alpha & Omega Semiconductor Inc. MOSFET array, part number AON6926, features a dual N-channel asymmetrical configuration with a drain-source voltage (Vdss) of 30V. This device offers continuous drain current capabilities of 11A and 12A at 25°C, with maximum power dissipation rated at 1.9W and 2.1W respectively. Optimized for high efficiency, it boasts a low on-resistance (Rds On) of 11mOhm at 20A and 10V, and a logic level gate for enhanced drive flexibility. The AON6926 utilizes advanced Metal Oxide technology and is presented in a compact 8-DFN (5x6) surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 24nC (max) at 10V and input capacitance (Ciss) of 1380pF (max) at 15V. This component is suitable for applications in power management, computing, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.9W, 2.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11A, 12A |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 15V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
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