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AON6924

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AON6924

MOSFET 2N-CH 30V 15A/28A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON6924 is a dual N-channel asymmetrical MOSFET array designed for demanding power management applications. This 30V device features a low Rds(on) of 5.2mOhm at 20A and 10V Vgs, with continuous drain currents of 15A for one channel and 28A for the other at 25°C. The AON6924 incorporates logic-level gate drive, simplifying control in various systems. Its robust construction includes a maximum power dissipation of 2W and 2.2W, and it is housed in an 8-DFN-EP (5x6) package for efficient surface mounting. Key electrical parameters include a gate charge (Qg) of 21nC (max) at 10V and input capacitance (Ciss) of 1560pF (max) at 15V. This component is suitable for use in automotive, consumer electronics, and industrial power solutions. The operating temperature range is -55°C to 150°C (TJ). This device is supplied on tape and reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-WDFN Exposed Pad
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Asymmetrical
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2W, 2.2W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C15A, 28A
Input Capacitance (Ciss) (Max) @ Vds1560pF @ 15V
Rds On (Max) @ Id, Vgs5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-DFN-EP (5x6)

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