AON6922
MOSFET 2N-CH 25V 18A/31A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AON6922 is a dual, asymmetrical N-channel MOSFET array designed for high-performance applications. This component features a 25V drain-source voltage rating and offers continuous drain currents of 18A and 31A at 25°C. The MOSFETs utilize a logic-level gate, facilitating direct drive from microcontrollers. Key electrical parameters include a maximum Rds(On) of 3.8mOhm at 20A and 10V, with a gate charge (Qg) of 32nC at 10V. Input capacitance (Ciss) is rated at 2340pF maximum at 12.5V. The device is packaged in an 8-DFN-EP (5x6) surface-mount configuration with an exposed pad for enhanced thermal dissipation, supporting power dissipation of 2W and 2.2W. Operating temperature ranges from -55°C to 150°C. This MOSFET array is suitable for power management, battery protection, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W, 2.2W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 18A, 31A |
| Input Capacitance (Ciss) (Max) @ Vds | 2340pF @ 12.5V |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.7V @ 250µA |
| Supplier Device Package | 8-DFN-EP (5x6) |
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