AON6918
MOSFET 2N-CH 25V 15A/26.5A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. presents the AON6918, a dual N-channel MOSFET array designed for high-efficiency power conversion. This component features a 25V drain-source voltage rating and offers asymmetrical current capabilities of 15A and 26.5A continuous drain current at 25°C. The AON6918 boasts a low on-resistance of 5.2mOhm at 20A and 10V, contributing to reduced conduction losses. Its 8-DFN-EP (5x6) package with an exposed pad ensures effective thermal management, with a maximum power dissipation of 2W and 2.2W. Key parameters include a gate charge of 21nC at 10V and input capacitance of 1560pF at 15V, suitable for applications requiring fast switching. This device is commonly utilized in power management solutions for computing and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W, 2.2W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 15A, 26.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1560pF @ 15V |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-DFN-EP (5x6) |
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