AON6912A
MOSFET 2N-CH 30V 10A/13.8A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. MOSFET Array, part number AON6912A, features a 30V drain-source voltage and a dual N-channel configuration. This device offers asymmetrical current ratings of 10A and 13.8A at 25°C, with a maximum power dissipation of 1.9W and 2.1W respectively. The AON6912A is housed in an 8-DFN (5x6) surface mount package, specifically the 8-PowerVDFN. Key performance characteristics include a low Rds(On) of 13.7mOhm at 10A and 10V, a maximum gate charge (Qg) of 17nC at 10V, and input capacitance (Ciss) of 910pF at 15V. The logic level gate feature and a threshold voltage (Vgs(th)) of 2.5V at 250µA make it suitable for various power management applications in automotive and industrial sectors. Operating temperature ranges from -55°C to 150°C. This component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.9W, 2.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 13.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 910pF @ 15V |
| Rds On (Max) @ Id, Vgs | 13.7mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
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