AON6910A
MOSFET 2N-CH 30V 9.1A/16A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AON6910A is a dual, asymmetrical N-channel MOSFET array designed for high-efficiency power management applications. This component offers a 30V drain-to-source voltage rating with continuous drain currents of 9.1A for one channel and 16A for the other, both at 25°C. The device features a low Rds(on) of 14mOhm at 9.1A and 10V Vgs, coupled with a logic level gate for enhanced control. With a maximum power dissipation of 1.9W and 2W respectively, and a gate charge of 9nC, the AON6910A is suitable for demanding applications in automotive and industrial sectors. It is supplied in an 8-DFN (5x6) package, surface mountable, and delivered on tape and reel. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.9W, 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.1A, 16A |
| Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 15V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 9.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
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