AON6906A
MOSFET 2N-CH 30V 9.1A/10A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. Dual N-Channel Power MOSFET, part number AON6906A, offers a 30V drain-source voltage capability. This surface mount device, packaged in an 8-DFN (5x6) configuration, features two asymmetrical N-channel MOSFETs. Each channel supports a continuous drain current of 9.1A and 10A respectively at 25°C, with a maximum power dissipation of 1.9W and 2W. The AON6906A exhibits a low on-resistance of 14.4mOhm at 9.1A and 10V Vgs. Key characteristics include a logic-level gate drive and a threshold voltage (Vgs(th)) of 2.4V at 250µA. The device is suitable for applications requiring efficient power switching in automotive and industrial sectors. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.9W, 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.1A, 10A |
| Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 15V |
| Rds On (Max) @ Id, Vgs | 14.4mOhm @ 9.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
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