AON6812
MOSFET 2N-CH 30V 27A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. presents the AON6812, a 2 N-channel MOSFET array designed for high-efficiency power management applications. This device features a 30V drain-to-source voltage rating and a continuous drain current capability of 27A at 25°C, with a low on-resistance of 4mOhm at 20A and 10V. The AON6812 is constructed with a logic-level gate for enhanced drive flexibility and offers a typical gate charge of 34nC at 10V. Its advanced MOSFET technology ensures optimal performance in demanding environments, with a maximum power dissipation of 4.1W. The component is housed in an 8-DFN-EP (5x6) package, suitable for surface mounting and supplied on tape and reel. This MOSFET array is commonly utilized in automotive, industrial, and consumer electronics sectors requiring robust power switching solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 4.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 27A |
| Input Capacitance (Ciss) (Max) @ Vds | 1720pF @ 15V |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN-EP (5x6) |
Request a Quote
Clients Also Buy
AOC2804
MOSFET 2N-CH 4DFN
AO4806
MOSFET 2N-CH 20V 8SOIC
AON5820_101
MOSFET 2N-CH 20V 10A 6DFN
