AON6810
MOSFET 2N-CH 30V 25A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AON6810 is a dual N-channel MOSFET array designed for high-efficiency power conversion applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 25A at 25°C. The AON6810 offers a low on-resistance of 4.4mOhm maximum at 20A and 10V Vgs, coupled with a logic level gate for enhanced drive flexibility. Its 4.1W maximum power dissipation and 34nC gate charge contribute to efficient operation. The device is housed in an 8-DFN-EP (5x6) package with a surface mount configuration, suitable for high-density board layouts. Typical applications include power management in computing, consumer electronics, and industrial systems. The MOSFET array is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 4.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 25A |
| Input Capacitance (Ciss) (Max) @ Vds | 1720pF @ 15V |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN-EP (5x6) |
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