AON5810
MOSFET 2N-CH 20V 7.7A 6DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AON5810 is a dual N-channel MOSFET array housed in a 6-DFN-EP (2x5) package. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 7.7A at 25°C. The MOSFET array offers a low on-resistance of 18mOhm maximum at 7.7A and 4.5V Vgs, with a logic level gate input. Key parameters include a maximum power dissipation of 1.6W and a Gate Charge (Qg) of 13.1nC at 4.5V. The Input Capacitance (Ciss) is 1360pF maximum at 10V. Designed for surface mounting, the AON5810 operates within a temperature range of -55°C to 150°C. This component is commonly utilized in power management applications across various industries including consumer electronics and industrial automation. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1360pF @ 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 13.1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-DFN-EP (2x5) |
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