AON5802BL
MOSFET 2N-CH 30V 7.2A 6DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. presents the AON5802BL, a dual N-channel MOSFET array designed for high-efficiency power management applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 7.2A at 25°C. The low on-resistance (Rds On) of 19mOhm at 7A and 4.5V Vgs ensures minimal power dissipation, with a maximum power rating of 1.6W.
The AON5802BL utilizes advanced MOSFET technology and is housed in a compact 6-DFN-EP (2x5) package with an exposed pad for enhanced thermal performance. Its configuration is two N-channel MOSFETs with a common drain. Key electrical parameters include a gate charge (Qg) of 24nC (max) at 10V and input capacitance (Ciss) of 1150pF (max) at 15V. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA. Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly employed in consumer electronics, computing, and industrial power systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 15V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-DFN-EP (2x5) |
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