AON5802BG
MOSFET 2N-CH 30V 10A 6DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. presents the AON5802BG, a dual N-channel MOSFET array. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 10A at 25°C, with a maximum power dissipation of 3.1W. The device offers a low on-resistance (Rds On) of 18mOhm at 7A and 4.5V, and a gate charge (Qg) of 32nC maximum at 10V. With an input capacitance (Ciss) of 1050pF maximum at 15V and a threshold voltage (Vgs(th)) of 1.5V maximum at 250µA, the AON5802BG is suitable for applications such as power management and high-density power conversion. It is supplied in a 6-DFN-EP (2x5) package for surface mounting and operates across a temperature range of -55°C to 150°C. The component is delivered in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 15V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-DFN-EP (2x5) |
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