AON5802B
MOSFET 2N-CH 30V 7.2A 6DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. MOSFET Array AON5802B offers a 30V drain-source voltage rating with a continuous drain current of 7.2A at 25°C. This dual N-channel device features a common drain configuration and is housed in a 6-DFN-EP (2x5) package, suitable for surface mounting. Key electrical characteristics include a maximum on-resistance of 19mOhm at 7A and 4.5V, a gate charge of 24nC at 10V, and input capacitance of 1150pF at 15V. The logic level gate functionality and a threshold voltage of 1.5V at 250µA enhance its usability in various power management applications. The device supports a power dissipation of 1.6W and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in consumer electronics and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 15V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-DFN-EP (2x5) |
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