AON5802A
MOSFET 2N-CH 30V 7.2A 6DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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The Alpha & Omega Semiconductor Inc. AON5802A is a 30V, dual N-channel MOSFET array designed for high-efficiency power management applications. This component features two independent N-channel MOSFETs in a 6-DFN-EP (2x5) package, configured for common drain operation. Each MOSFET offers a continuous drain current of 7.2A at 25°C and a low on-resistance (Rds On) of 20mOhm maximum at 7.2A and 4.5V Vgs. The logic level gate input, with a threshold voltage (Vgs(th)) of 1.5V, ensures compatibility with lower voltage control signals. Key electrical characteristics include a maximum gate charge (Qg) of 10.7nC at 4.5V and an input capacitance (Ciss) of 1115pF at 15V. With a power dissipation rating of 1.7W and an operating temperature range of -55°C to 150°C, the AON5802A is suitable for demanding environments found in consumer electronics, industrial control, and automotive systems. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.7W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 1115pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10.7nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-DFN-EP (2x5) |
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