AON4807
MOSFET 2P-CH 30V 4A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AON4807 is a 30V P-channel MOSFET array designed for high-efficiency applications. This dual MOSFET configuration features a continuous drain current (Id) of 4A at 25°C and a low on-resistance of 68mOhm at 4A, 10V. The device utilizes MOSFET technology and is housed in an 8-DFN (3x2) package for surface mounting, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 10nC at 10V and input capacitance (Ciss) of 290pF at 15V. With a maximum power dissipation of 1.9W and an operating temperature range of -55°C to 150°C, the AON4807 is suitable for power management solutions in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.9W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 15V |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-DFN (3x2) |
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