AON3814L
MOSFET 2N-CH 20V 6A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AON3814L is a dual N-channel MOSFET array featuring a 20V drain-to-source voltage (Vdss). This component offers a continuous drain current (Id) of 6A at 25°C with a low on-resistance of 17mOhm at 6A and 4.5V Vgs. The AON3814L has a maximum power dissipation of 2.5W and a gate charge (Qg) of 13nC at 4.5V. Input capacitance (Ciss) is a maximum of 1100pF at 10V. The device is housed in an 8-DFN (3x3) package, suitable for surface mounting, and is supplied on tape and reel. Operating temperature ranges from -55°C to 150°C. This MOSFET array is utilized in applications such as power management, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 8-DFN (3x3) |
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