AON3810
MOSFET 2N-CH 20V 8.5A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AON3810 is a dual N-channel MOSFET array featuring a 20V drain-source voltage and a continuous drain current capability. This device utilizes Metal Oxide technology and is housed in an 8-DFN (3x3) package, designed for surface mounting. Key electrical characteristics include a maximum power dissipation of 2.5W and a low Rds(on) of 24mOhm at 7A and 10V. The logic-level gate facilitates direct drive from low-voltage microcontrollers. Input capacitance (Ciss) is a maximum of 280pF at 10V, with a gate charge (Qg) of 5.2nC at 4.5V. The threshold voltage (Vgs(th)) is a maximum of 1V at 250µA. This component is typically employed in power management applications within the consumer electronics and industrial automation sectors. The AON3810 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-DFN (3x3) |
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