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AON3806

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AON3806

MOSFET 2N-CH 20V 6A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

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Alpha & Omega Semiconductor Inc. presents the AON3806, a dual N-channel MOSFET array designed for demanding applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C. Its 2.5W maximum power dissipation and 26mOhm maximum Rds(on) at 6.8A and 4.5V make it suitable for efficient power switching. The logic-level gate drive, with a Vgs(th) of 1.1V at 250µA, simplifies driving circuitry. With a gate charge (Qg) of 9nC maximum at 4.5V and input capacitance (Ciss) of 500pF maximum at 10V, this MOSFET array is optimized for high-speed switching. The AON3806 is housed in an 8-DFN (3x3) package, suitable for surface mounting and supplied on tape and reel. Its operating temperature range is -55°C to 150°C. This device is commonly found in consumer electronics and industrial power management solutions.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Leads
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Common Drain
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.5W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A
Input Capacitance (Ciss) (Max) @ Vds500pF @ 10V
Rds On (Max) @ Id, Vgs26mOhm @ 6.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device Package8-DFN (3x3)

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