AON2880
MOSFET 2N-CH 20V 7A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. presents the AON2880, a dual N-channel MOSFET array. This device features a 20V drain-source voltage rating and supports a continuous drain current of 7A at 25°C. With a low Rds(On) of 21.5mOhm at 5A and 4.5V, it is optimized for efficient power switching. The AON2880 incorporates a logic-level gate for compatibility with lower voltage control signals. Its 8-DFN-EP (2x2) package with an exposed pad allows for effective thermal management, supporting a maximum power dissipation of 2W. Key electrical parameters include a maximum gate charge of 9nC at 4.5V and an input capacitance of 600pF at 10V. The MOSFET array is suitable for applications in consumer electronics and industrial systems requiring compact, high-efficiency power solutions. It is supplied in Tape & Reel packaging for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V |
| Rds On (Max) @ Id, Vgs | 21.5mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-DFN-EP (2x2) |
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