AON2809
MOSFET 2P-CH 12V 2A 6DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AON2809 is a 2 P-Channel MOSFET array designed for efficient power management. This device features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C. The low on-resistance of 68mOhm at 2A and 4.5V (Vgs) minimizes conduction losses. With a logic level gate, it offers compatibility with lower voltage control signals. The AON2809 boasts a gate charge (Qg) of 4.4nC maximum at 4.5V and an input capacitance (Ciss) of 415pF maximum at 6V. Packaged in a compact 6-WDFN exposed pad (2x2mm), it is suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C. This component finds application in battery-powered devices, consumer electronics, and power management circuits. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 415pF @ 6V |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 6-DFN (2x2) |
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