AON2800
MOSFET 2N-CH 20V 4.5A 6DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. presents the AON2800, a two N-channel MOSFET array housed in a 6-DFN (2x2) surface mount package. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 4.5A at 25°C. The AON2800 is designed with logic-level gate drive, simplifying control circuitry. Key electrical parameters include a maximum Rds(on) of 47mOhm at 4A and 4.5V, a gate charge (Qg) of 6nC at 4.5V, and an input capacitance (Ciss) of 435pF at 10V. With a maximum power dissipation of 1.5W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in power management, battery charging, and consumer electronics. The AON2800 is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 10V |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 6-DFN (2x2) |
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