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AOD609

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AOD609

MOSFET N/P-CH 40V 12A TO252-4L

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOD609 is a MOSFET array featuring N-channel and P-channel devices in a common drain configuration. This component offers a 40V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 12A at 25°C. Key electrical characteristics include a maximum on-resistance (Rds On) of 30mOhm at 12A and 10V, and a logic level gate for enhanced drive flexibility. The device exhibits a typical input capacitance (Ciss) of 650pF at 20V and a gate charge (Qg) of 10.8nC at 10V. Designed for surface mounting, the AOD609 is housed in a TO-252-4L (DPAK) package and is supplied on tape and reel. It is rated for a maximum power dissipation of 2W and operates across a temperature range of -55°C to 175°C. This component is suitable for applications in automotive and industrial power management.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-5, DPAK (4 Leads + Tab), TO-252AD
Mounting TypeSurface Mount
ConfigurationN and P-Channel, Common Drain
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2W
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C12A
Input Capacitance (Ciss) (Max) @ Vds650pF @ 20V
Rds On (Max) @ Id, Vgs30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs10.8nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252-4L

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