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AOD606

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AOD606

MOSFET N/P-CH 40V 8A TO252-4L

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. MOSFET Array, part number AOD606, is a dual N-channel and P-channel device featuring a common drain configuration. This MOSFET array operates with a drain-source voltage (Vdss) of 40V and supports a continuous drain current (Id) of 8A at 25°C. It boasts low on-resistance, specified at 33mOhm maximum at 8A and 10V, with a logic level gate input. The device is housed in a surface-mount TO-252-4L (DPAK) package, supplied on tape and reel. Key electrical parameters include a typical gate charge (Qg) of 9.2nC at 10V and input capacitance (Ciss) of 404pF at 20V. The AOD606 is suitable for applications within automotive and industrial sectors requiring efficient switching and power management. Its maximum power dissipation is rated at 1.6W for one channel and 1.7W for the other.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-5, DPAK (4 Leads + Tab), TO-252AD
Mounting TypeSurface Mount
ConfigurationN and P-Channel, Common Drain
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.6W, 1.7W
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C8A
Input Capacitance (Ciss) (Max) @ Vds404pF @ 20V
Rds On (Max) @ Id, Vgs33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs9.2nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252-4L

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