AOC3870
MOSFET 2N-CH 12V 25A 10DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOC3870 is a dual N-channel MOSFET array designed for high-efficiency power applications. This component features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 25A at 25°C. The AOC3870 offers a low on-resistance (Rds On) of 2.8mOhm at 5A and 4.5V Vgs, minimizing conduction losses. With a gate charge (Qg) of 32nC at 4.5V, it supports fast switching performance. The device is packaged in a compact 10-AlphaDFN (3.01x1.52) surface mount configuration, suitable for space-constrained designs. It operates across a wide temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2.2W (Ta). This MOSFET array finds application in power management solutions, portable electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.2W (Ta) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 10-AlphaDFN (3.01x1.52) |
Request a Quote
Clients Also Buy
AOC2802
MOSFET 2N-CH 4WLCSP
AOCA32112E
MOSFET 2N-CH 20V 4.5A 4ALPHADFN
AOC4810
MOSFET 2N-CH 8ALPHADFN
