AOC3868
MOSFET 2N-CH 6DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AOC3868 is a 2 N-Channel MOSFET array packaged in a 6-DFN (2.7x1.8) footprint. This device features a maximum power dissipation of 2.5W and a common drain configuration. It operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge (Qg) of 50nC maximum at 4.5V and a threshold voltage (Vgs(th)) of 1.1V maximum at 250µA. The AOC3868 is commonly utilized in power management solutions within the automotive and industrial sectors. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-XDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 6-DFN (2.7x1.8) |
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