AOC3860A
MOSFET 2N-CH 12V 25A 6ALPHADFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AOC3860A is a dual N-channel MOSFET array designed for power management applications. This device features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 25A at 25°C. The AOC3860A offers a low on-resistance (Rds On) of 3.5mOhm maximum at 5A and 4.5V gate-source voltage. Gate charge (Qg) is specified at a maximum of 44nC at 4.5V. The component is housed in a 6-AlphaDFN (3.05x1.77) surface mount package and operates within a temperature range of -55°C to 150°C. With a power dissipation of 2.5W at 25°C, it is suitable for use in automotive and industrial electronics. The configuration is 2 N-Channel with a common drain.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W (Ta) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-AlphaDFN (3.05x1.77) |
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