AOC2806
MOSFET 2N-CH 20V 4DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. presents the AOC2806, a dual N-channel MOSFET array from the AlphaMOS series. This device, packaged in a compact 4-DFN (1.7x1.7) surface mount configuration, offers a power dissipation of 700mW and operates across a temperature range of -55°C to 150°C. Featuring a common drain configuration, the AOC2806 is designed for applications requiring efficient switching and power management. Key electrical characteristics include a maximum gate charge (Qg) of 12.5nC at 4.5V. This component is suitable for use in industrial and consumer electronics where space efficiency and reliable performance are critical. The AOC2806 is supplied in Tape & Reel packaging.
Additional Information
Series: AlphaMOSRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 4-DFN (1.7x1.7) |
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