AO8822#A
MOSFET 2N-CH 20V 7A 8TSSOPManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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The Alpha & Omega Semiconductor Inc. AO8822-A is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 7A at 25°C. The AO8822-A offers a low on-resistance (Rds On) of 18mOhm at 7A and 10V, coupled with a logic-level gate for enhanced compatibility with lower voltage control signals. With a maximum power dissipation of 1.5W and a gate charge (Qg) of 18nC, this device is suitable for high-density power management solutions. The 8-TSSOP package facilitates surface mounting and is ideal for applications in consumer electronics, automotive systems, and industrial control. Its operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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