AO8822
MOSFET 2N-CH 20V 7A 8TSSOPManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AO8822 is a dual N-channel MOSFET array featuring a 20V Vds rating and a continuous drain current capability of 7A at 25°C. This device utilizes Metal Oxide technology with a logic level gate, offering a low Rds(On) of 18mOhm at 7A and 10V. The AO8822 is packaged in an 8-TSSOP configuration, suitable for surface mount applications and supplied on tape and reel. Key electrical parameters include a maximum power dissipation of 1.5W, a gate charge of 18nC at 10V, and an input capacitance of 780pF at 10V. The threshold voltage (Vgs(th)) is a maximum of 1V at 250µA. This component is designed for operation within a temperature range of -55°C to 150°C. The AO8822 finds application in power management solutions across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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