AO8810
MOSFET 2N-CH 20V 7A 8TSSOPManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AO8810 is a dual N-channel MOSFET array designed for efficient power switching applications. This device features a 20V drain-source voltage (Vdss) and can handle a continuous drain current (Id) of 7A at 25°C. The AO8810 boasts a low on-resistance (Rds On) of 20mOhm at 7A and 4.5V, and a logic level gate threshold (Vgs(th)) of 1.1V at 250µA, facilitating operation with lower gate drive voltages. With a maximum power dissipation of 1.5W and a gate charge (Qg) of 14nC at 4.5V, it is suitable for battery management, consumer electronics, and portable device power control. The component is housed in an 8-TSSOP package and is supplied on tape and reel. Its operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1295pF @ 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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