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AO8810

MOSFET 2N-CH 20V 7A 8TSSOP

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO8810 is a dual N-channel MOSFET array designed for efficient power switching applications. This device features a 20V drain-source voltage (Vdss) and can handle a continuous drain current (Id) of 7A at 25°C. The AO8810 boasts a low on-resistance (Rds On) of 20mOhm at 7A and 4.5V, and a logic level gate threshold (Vgs(th)) of 1.1V at 250µA, facilitating operation with lower gate drive voltages. With a maximum power dissipation of 1.5W and a gate charge (Qg) of 14nC at 4.5V, it is suitable for battery management, consumer electronics, and portable device power control. The component is housed in an 8-TSSOP package and is supplied on tape and reel. Its operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Common Drain
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.5W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C7A
Input Capacitance (Ciss) (Max) @ Vds1295pF @ 10V
Rds On (Max) @ Id, Vgs20mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device Package8-TSSOP

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