AO8801L
MOSFET 2P-CH 20V 4.7A 8TSSOPManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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The Alpha & Omega Semiconductor Inc. AO8801L is a dual P-channel MOSFET array designed for demanding applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.7A per channel at 25°C. With a low on-resistance (Rds On) of 42mOhm maximum at 4.7A and 4.5V Vgs, it offers efficient power switching. The AO8801L boasts a maximum power dissipation of 1.4W and is housed in a compact 8-TSSOP package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 17.2nC maximum and input capacitance (Ciss) of 1450pF maximum, both specified at 10V. The threshold voltage (Vgs(th)) is a maximum of 1V at 250µA. This MOSFET array operates across a temperature range of -55°C to 150°C. Applications span consumer electronics, industrial control systems, and battery management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | - |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 10V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 4.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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