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AO6801E

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AO6801E

MOSFET 2P-CH 30V 2A 6TSOP

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO6801E is a dual P-channel MOSFET array designed for high-efficiency applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C. The AO6801E offers a low on-resistance (Rds On) of 110mOhm maximum at 2A and 10V, and a logic-level gate threshold voltage (Vgs(th)) of 1.5V maximum at 250µA. With a gate charge (Qg) of 12nC maximum at 10V and input capacitance (Ciss) of 305pF maximum at 15V, it is suitable for various switching power supply designs. Housed in a compact 6-TSOP (SC-74, SOT-457) package, it supports surface mounting and operates within a temperature range of -55°C to 150°C. The AO6801E is utilized in power management, battery charging, and consumer electronics sectors. This component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max700mW
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2A
Input Capacitance (Ciss) (Max) @ Vds305pF @ 15V
Rds On (Max) @ Id, Vgs110mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package6-TSOP

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