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AO6800

MOSFET 2N-CH 30V 3.4A 6TSOP

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AO6800 is a dual N-channel MOSFET array designed for efficient power switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.4A at 25°C. The AO6800 offers a low Rds(on) of 60mOhm maximum at 3.4A and 10V Vgs, contributing to reduced conduction losses. It operates with a logic level gate, making it suitable for direct control by microcontrollers. Key parameters include a gate charge (Qg) of 10nC maximum at 10V and input capacitance (Ciss) of 235pF maximum at 15V. The AO6800 is packaged in a surface-mount 6-TSOP (SOT-457) and is supplied on tape and reel. This component finds application in power management, battery protection, and general-purpose switching across various electronic systems. Its maximum power dissipation is rated at 1.15W. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.15W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.4A
Input Capacitance (Ciss) (Max) @ Vds235pF @ 15V
Rds On (Max) @ Id, Vgs60mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package6-TSOP

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