AO6800
MOSFET 2N-CH 30V 3.4A 6TSOPManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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The Alpha & Omega Semiconductor Inc. AO6800 is a dual N-channel MOSFET array designed for efficient power switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.4A at 25°C. The AO6800 offers a low Rds(on) of 60mOhm maximum at 3.4A and 10V Vgs, contributing to reduced conduction losses. It operates with a logic level gate, making it suitable for direct control by microcontrollers. Key parameters include a gate charge (Qg) of 10nC maximum at 10V and input capacitance (Ciss) of 235pF maximum at 15V. The AO6800 is packaged in a surface-mount 6-TSOP (SOT-457) and is supplied on tape and reel. This component finds application in power management, battery protection, and general-purpose switching across various electronic systems. Its maximum power dissipation is rated at 1.15W. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.15W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 15V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
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