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AO6601L

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AO6601L

MOSFET N/P-CH 30V 3.4A 6TSOP

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO6601L is a dual N-channel and P-channel MOSFET array designed for efficient power management applications. This device features a drain-source voltage (Vdss) of 30V, with continuous drain current (Id) ratings of 3.4A for the N-channel and 2.3A for the P-channel, both at 25°C ambient. The AO6601L offers low on-resistance (Rds On) of 60mOhm at 3A, 10V for the N-channel and 135mOhm at 2.3A, 10V for the P-channel. With a maximum power dissipation of 1.15W and a compact 6-TSOP (SC-74, SOT-457) package, this MOSFET array is suitable for surface mount applications. Key parameters include input capacitance (Ciss) of 390pF (N-ch) and 409pF (P-ch) at 15V, and gate charge (Qg) of 4.34nC (N-ch) and 4.8nC (P-ch) at 4.5V. The threshold voltage (Vgs(th)) is a maximum of 1.4V at 250µA. Operating temperature range is -55°C to 150°C. This component is commonly utilized in consumer electronics and automotive systems. It is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.15W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.4A (Ta), 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds390pF @ 15V, 409pF @ 15V
Rds On (Max) @ Id, Vgs60mOhm @ 3A, 10V, 135mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs4.34nC @ 4.5V, 4.8nC @ 4.5V
FET Feature-
Vgs(th) (Max) @ Id1.4V @ 250µA
Supplier Device Package6-TSOP

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