AO5800E
MOSFET 2N-CH 60V SC89-6Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AO5800E is a dual N-channel MOSFET array featuring a 60V drain-source voltage and 400mW maximum power dissipation. This component utilizes MOSFET (Metal Oxide) technology and is designed for surface mounting within an SC-89-6 package, specifically SOT-563, SOT-666. The AO5800E offers a logic level gate feature, with a typical gate threshold voltage of 2.5V at 250µA. It exhibits a maximum on-resistance of 1.6 Ohms at 400mA and 10V. With an input capacitance of 50pF at 30V and an operating temperature range of -55°C to 150°C, this device is suitable for applications in consumer electronics, industrial control systems, and power management solutions. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 400mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 30V |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 400mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-89-6 |
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