AO5600E
MOSFET N/P-CH 20V 0.6A SC89-6Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AO5600E is a dual N-channel/P-channel MOSFET array designed for power management applications. This component features a 20V drain-source voltage rating and continuous drain currents of 600mA for the N-channel and 500mA for the P-channel, respectively. The AO5600E offers a low on-resistance of 650mOhm maximum at 500mA and 4.5V gate-source voltage. With a logic level gate feature, it is suitable for low-voltage control. The device is available in an SC-89-6 package, specifically SOT-563/SOT-666, and is supplied on tape and reel. Key parameters include a maximum power dissipation of 380mW and a gate charge of 1nC maximum. The AO5600E finds application in portable electronics, battery management, and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 380mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 600mA, 500mA |
| Input Capacitance (Ciss) (Max) @ Vds | 45pF @ 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 500mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-89-6 |
Request a Quote
Clients Also Buy
AOC2802
MOSFET 2N-CH 4WLCSP
AOCA32112E
MOSFET 2N-CH 20V 4.5A 4ALPHADFN
AOC4810
MOSFET 2N-CH 8ALPHADFN
