AO4914L
MOSFET 2N-CH 30V 8A 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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The Alpha & Omega Semiconductor Inc. AO4914L is a dual N-channel power MOSFET array designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and supports a continuous drain current of 8A at 25°C with a low on-resistance of 20.5mOhm at 8A, 10V. The device is packaged in an 8-SOIC (0.154", 3.90mm width) surface mount configuration, offering a maximum power dissipation of 2W. Key electrical characteristics include a gate charge (Qg) of 18nC (max) at 10V and input capacitance (Ciss) of 865pF (max) at 15V. The AO4914L operates across a temperature range of -55°C to 150°C (TJ). This MOSFET array is commonly utilized in power management circuits, battery charging, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 865pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20.5mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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