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AO4862E

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AO4862E

MOSFET 2N-CH 30V 4.5A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AlphaMOS AO4862E is a dual N-channel MOSFET array designed for efficient power switching. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C. The low on-resistance of 46mOhm at 4.5A and 10V gate-source voltage (Vgs) ensures minimal power dissipation, with a maximum power rating of 1.7W. Key parameters include a gate charge (Qg) of 6nC at 4.5V and input capacitance (Ciss) of 215pF at 15V. The device operates across a temperature range of -55°C to 150°C and is supplied in an 8-SOIC surface-mount package, presented on tape and reel. This MOSFET array is suitable for applications in power management, battery charging, and consumer electronics.

Additional Information

Series: AlphaMOSRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.7W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds215pF @ 15V
Rds On (Max) @ Id, Vgs46mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SOIC

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