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AO4852

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AO4852

MOSFET 2N-CH 60V 3A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

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Alpha & Omega Semiconductor Inc. AO4852 is a dual N-channel MOSFET array designed for power management applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) of 3A at 25°C. The MOSFET array offers a low On-Resistance (Rds On) of 90mOhm at 3A and 10V, with a Logic Level Gate for enhanced drive capability. Key parameters include a Gate Charge (Qg) of 9.2nC (Max) at 10V and an Input Capacitance (Ciss) of 450pF (Max) at 30V. The AO4852 is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, suitable for high-density circuit designs. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.4W. This component is commonly utilized in automotive and industrial power control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.4W
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C3A
Input Capacitance (Ciss) (Max) @ Vds450pF @ 30V
Rds On (Max) @ Id, Vgs90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs9.2nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.6V @ 250µA
Supplier Device Package8-SOIC

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